替代ATMI ST-250英特格  2026年品牌推荐

Post-Etch Residue Removal Solution半导体干法刻蚀后清洗去胶液，替代ATMI ST-250（英特格）

深圳市芯泰科光电有限公司

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深圳市芯泰科光电有限公司，创立于2014年，是一家服务于微电子领域的产品贸易及技术服务提供商。我们已经成为国内微电子制程领域和相关大学研究所信赖的合作伙伴；公司秉持以忠诚态度对待新旧客户，以客户满意为导向，提供优质高效率的专业服务，提供产品行销及技术支援解决方案。我们目标是成为一家新材料应用技术推广服务的专业供应商。

Post-Etch Residue Removal Solution

Origin Example of Post-Etch Residue

Residue type: PR residues, PR crust, post-ash residue (Carbon contained organic polymers), plasma post-etch residue (X contained oxides polymers), metal oxides, Si-oxides, metal complex…. 

                        Strategy for Post-Etch Residue Removal

1. Surface wetting: surfactant additive to lower down surface tension of cleaning solution

2. Solvent Dissolution: dissolve organic residue polymers

3. Degradation: controlled wet-etching to remove inorganic reside 

 4. Coordination: forms metal-lig complex compounds to remove metal containing residue 

 5. Corrosion control: use corrosion inhibitor to prevent damage to metals, dielectrics, other materials 

ZS-750 Residue Remover Design Concept

1. Capable to remove all post-etch residue at RT~50oC 

2. Short process time 

3. Buffered solution to keep alkaline pH 

 4. Nodamage to dielectric materials 

 5. No Cu corrosion 

 6. Electronic grade clean solution 

 7. Compatible to wet bench SWT 

 8. Excellent bath life 

 9. HDA-free

Amines                    Alkaline pH buffer, organic residue remova

 Fluoride                  Inorganic residue degradation

 Metal chelator        Metal oxide/ion removal, buffer 

 Surfactant               Organic inorganic residue removal, surface wetting

 Corrosion                Metal corrosion control surface conditioning

Inhibitor

Pourbaix diagram for fopper in uncomplod media

Copper corrosion can be controlled better in alkaline pH environment!

Surface Wetting Phenomena

Surface wetting is critical mechanism to bring cleaning solution to contact with

small dimension structure surface to ensure well reaction between effetive

ingredients residues!

Coordination Chemistry to Dissoive Metal-containing Residues

Recommended Process Temperature Range

1. Recommended process temperature for ZS-750 is 30~60oC. 

 2. Spray performance is not good enough for SWT due to higher viscosity of cleaning solution. 

 3. Reactions may not be activated well enough to remove residues at temperature lower than 30oC. 

 4. Higher process temperature may cause faster metal (Cu) oxidation in ambient atmosphere (O2 presence) which resulted in higher etch rates

 Tested by immersing coupons into ZS-750 at ambient lab environment followed by direct DIW rinse CDA drying.

Cleaning Performance Example 1

Cleaning Performance Example 2

Cleaning Performance Example 3

Quality ontrol Items CoA

ZS-750 Etch Rates to Blanket Films

Tested by immersing coupons into ZS-750 at ambient lab environment followed by direct

DIW rinse CDA drying.

Process Tools Bath Life

 1. ZS-750 can be used in immersion wet bench or spray-type single wafer tools (SWT). 

 2. ZS-750 bath life is up to 96 hrs or longer! 

 3.Major failure mechanism is water content change due to evaporation or moisture absorption/bring-in wafer loadings. 

 4. Water content monitoring replenish is helpful to bath life extension

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