NEGATIVE RESIST NR2-8000P
Description
? Negative Resist NR2-8000P is a negative tone photoresist designed for thick film
applications is compatible with UV exposure tools emitting at the 365 nm exposure
wavelength, including wafer steppers, scanning projection aligners, proximity printers
contact printers.
? The following are the advantages of NR2-8000P over other resists: - superior resolution capability - high photospeed which translates into high exposure throughput - fast develop time - superior adhesion in plating wet etching - easy resist removal in Resist Remover RR41 - shelf life exceeding 1 year at proper storage temperatures.
? The formulation processing of NR2-8000P were designed with regard to
occupational environmental safety. The principal solvent in NR2-8000P is
gammabutyrolactone development of NR2-8000P is accomplished in a
basic water solution.
Properties
? Solids content (%) 45-50
? Principal solvent gammabutyrolactone
? Appearance light yellow liquid
? Coating characteristic uniform, striation free
? Film thickness:
1st Soft 2nd Soft Post-Exposure
Coating Spin Hotplate Hotplate Hotplate Film
Spin Speed Time Bake Time Bake Time Bake Time Thickness
(rpm) (s) (s) 80°C (s) 150°C (s) 80°C (nm)
500 5 300 followed by 450 600 95000-105000
1000 5 300 followed by 120 300 47000-53000
2000 5 0 60 300 18000-22000
2500 40 0 60 180 9000-10000
3000 40 0 60 180 8000-8300
4000 40 0 60 180 6500-6800
? Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film): 46
? Guaranteed shelf life at 5°C storage (years): 1
Processing
1.Application of resist by spin coating at a ed spin speed for a time designated in
film thickness vs. spin speed on page 1
2. Softbake procedure is determined by film thickness. Please refer to bake instructions
on page 1.
3. Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm
exposure light intensity (mW/cm2) with a proper gauge. Multiply resist thickness (μm) by
46 mJ/cm2 to obtain exposure dose. Divide exposure dose (mJ/cm2) by light intensity
(mW/cm2) at 365 nm wavelength to obtain exposure time (s) on silicon substrates.
4. Post-exposure bake on hotplate at 80°C for a time depending on a film thickness.
Please refer to bake instructions on page 1.
5. Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C.
Please ensure that there is no exposed resist thickness loss during development.
Exposed resist thickness loss during development would indicate improper exposure
energy /or bake conditions.
6. Resist rinse in deionized water until water resistivity reaches prescribed limit.
7. Drying of resist.
8. Removal of resist in Resist Remover RR41.
The above procedure refers to substrates that are good
conductors of heat such as
silicon, GaAs, InP, etc. Hotplate temperatures need to be adjusted such that surface
temperature of substrates that are poor
conductors of heat reach designated
temperatures for softbake post-exposure bake. Always use external thermocouples
when measuring surface temperatures.
Hling Precautions
Negative Resist NR2-8000P is a flammable liquid. Hle it with care. Keep it away
heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed
or touched. Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber
gloves protective coating.