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供大学研究所高垂直性负胶FUTURREX NR7G-6000P

发布日期:2024/11/1 14:01:10

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供大学研究所高垂直性负胶FUTURREX NR7G-6000P
深圳市芯泰科光电有限公司
产品热线许经理 :13玖23八66554  扣扣:35捌9123零

FUTURREX NEGATIVE RESIST NR7G-6000P
Description 
? Negative Resist NR7G-6000P is a negative tone photoresist designed for 365, 406  
436 nm wavelength exposure, using tools such as wafer steppers, scanning projection 
aligners, proximity printers contact printers. 
? These are the advantages of NR7G-6000P over other resists: - superior resolution capability - fast photospeed - fast develop time - superior temperature resistance of up to 180°C - superior ivity in RIE process - easy resist removal in Resist Remover RR41 - shelf life exceeding 1 year at room temperature storage. 
? The formulation processing of NR7G-6000P were designed with regard to 
occupational environmental safety. The principal solvent in NR7G-6000P is 
cyclohexanone development of NR7G-6000P is accomplished in a basic water solution. 
 
                              
Properties 
    ?    Solids content (%)                                                                                    40-45                        
    ?    Principal solvent                                                                                       cyclohexanone 
    ?    Appearance                                                                                              light yellow liquid 
    ?    Coating characteristic                                                                               very uniform,  
                                                                                                                            striation free 
    ?    Film thickness after 100°C hotplate bake for 300 s.  
           Coating spin speed, 40 s spin (rpm):                                                             (nm) 
800                                                                                                           11500-12500 
1000                                                                                                     11020-12180 
2000                                                                                                    7011-7749 
3000                                                                                                    5700-6300 
4000                                                                                                    4978-5502 
                                                                                                     
 
    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)  5 
    ?    Guaranteed shelf life at 25°C storage (years)                                           1         
Processing 
 
1. Application of resist by spin coating at ed spin speed for 40 s. 
 
2. 100°C hotplate bake for 300 s. (softbake). 
 
3. Resist exposure in a tool emitting 365, 406 436 nm wavelength. 
 
4. 100°C hotplate bake for 300 s. (post-exposure bake). 
 
5. Resist development in Resist Developer RD6 diluted 3:1 (RD6:water) ratio by immersion. 
Development time for 6.0 μm thick film, for example, is 25 s. 
 
6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 
 
7. Drying of resist. 
 
8. Removal of resist in Resist Remover RR41. 
 
 Note: The above procedure refers to substrates that are good conductors of heat such as     
 silicon, GaAs, etc. Bake times need to be increased by a factor of 3.5 for substrates that are 
 poor conductors of heat such as 0.7 mm thick glass.
 
Hling Precautions 
 
Negative Resist NR7G-6000P is a flammable liquid. Hle it with care. Keep it away  
heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. 
Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves  
protective coating.