FUTURREX NEGATIVE RESIST NR9G-3000PY
Description
? Negative Resist NR9G-3000PY is a negative tone photoresist designed for 365 nm, 406
nm, 436 nm exposure wavelengths, using tools such as wafer steppers, scanning
projection aligners, proximity printers contact printers.
? After resist development NR9G-3000PY exhibits a negative-sloping resist sidewall profile,
which facilitates a simple resist lift-off process.
? The following are advantages of NR9G-3000PY over other resists:
- superior resolution capability
- fast develop time
- easy adjustment of the degree of resist undercut as a function of exposure energy
- temperature resistance of up to 100°C
- easy resist removal in Resist Remover RR5
- shelf life exceeding 1 year at room temperature storage at 23°C.
? The formulation processing of NR9G-3000PY were designed with regard to
occupational environmental safety. The principal solvent in NR9G-3000PY is
cyclohexanone development of NR9G-3000PY is accomplished in a basic water
solution.
Properties
? Solids content (%) 31-35
? Principal solvent cyclohexanone
? Appearance light yellow liquid
? Coating characteristic very uniform,
striation free
? Film thickness after 100°C hotplate bake for 300 s
Coating spin speed, 40 s spin (rpm): (nm)
800 5700-6300
3000 2850-3150
4000 2460-2720
5000 2140-2326
? Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film) 30
? Guaranteed shelf life at 23°C storage (years) 1
Processing
1. Application of NR9G-3000PY resist static dispense by spin coating at 3000 rpm for
40 s. Acceleration 0 to 3000 rpm is conducted in less than 1 s. Amount of
dispensed NR9G-3000PY is 7 mL per 6 inch diameter wafer.
2. Softbake on a hotplate at 110°C for 90 s.
3. Substrate cooling to room temperature.
4. Resist exposure with a tool emitting light at wavelengths shorter than 440 nm.
5. 110°C hotplate bake for 90 s. (post-exposure bake)
6. Substrate cooling to room temperature.
7. Resist development in Resist Developer RD6 or resist developer containing 2.38%
TMAH by immersion agitation at 20-25°C. Development time for 3000 nm thick film
is 16 s.
8. Resist rinse in fast flowing stream of deionized water until water resistivity reaches
prescribed limit.
9. Drying of resist.
10. Removal of resist in Resist Remover RR5 at room temperature.
Note: The above procedure refers to substrates, which are good conductors of heat such as
silicon, GaAs etc. Bake times need to be increased by a factor of 3.5 for substrates that are
poor conductors of heat such as 0.7 mm thick glass.
Hling Precautions
Negative Resist NR9G-3000PY is a flammable liquid. Hle it with care. Keep it away
heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or
touched. Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber
gloves protective coating..
