FUTURREX NEGATIVE RESIST NR4-8000P

Description 

? Negative Resist NR4-8000P is a negative tone photoresist designed for thick film 

applications is compatible with UV exposure tools emitting at the 365 nm exposure 

wavelength, including wafer steppers, scanning projection aligners, proximity printers  

contact printers. 

? These are the advantages of NR4-8000P over other resists: - superior resolution capability - high photospeed which translates into high exposure throughput - fast develop time - superior temperature resistance of up to 100°C - superior ivity in RIE process - easy resist removal in Resist Remover RR41 - shelf life exceeding 3 years at room temperature storage. 

? The formulation processing of NR4-8000P were designed with regard to occupational 

environmental safety. The principal solvent in NR4-8000P is cyclohexanone  

development of NR4-8000P is accomplished in a basic water solution. 

                              

Properties 

    ?    Solids content (%)                                                          39-43                  

    ?    Principal solvent                                                                                            cyclohexanone 

    ?    Appearance                                               light yellow 

                                                                                                                                 liquid 

    ?    Coating characteristic                                          very uniform,       

                                                                                                                                 striation free 

? Film thickness: 

  1st Soft 2nd Soft  

Post

Exposure  

Coating Spin Hotplate Hotplate Hotplate Film 

Spin Speed Time Bake Time Bake Time Bake Time Thickness 

(rpm) (s) (s) 80°C (s) 150°C (s) 80°C (nm) 

500 5 300 followed by 450 600 95000-105000 

1000 5 300 followed by 120 300 47000-53000 

2500 5 0 60 300 18000-22000 

2000 40 0 60 180 9000-10000 

3000 40 0 60 180 8000-8300 

4000 40 0 60 180 6500-6800 

 

    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)       21 

    ?    Guaranteed shelf life at 25°C storage (years)                               3     

Processing 

 

1. Application of resist by spin coating at a ed spin speed for a time designated in a 

film thickness vs. spin speed on page 1. 

 

2. Start dispensing Edge Bead Remover EBR2 simultaneously on top bottom surface of 

spinning coated substrate through nozzles 0.5-1.0 cm an edge of a substrate as 

soon as edge bead forms (3-5 s after ceasing resist dispense). 

 

3. Softbake procedure is determined by film thickness. Please refer to bake instructions on 

page 1. 

 

4. Resist exposure in a tool emitting light at 365 nm wavelength. Please determine 365 nm 

exposure light intensity (mW/cm2) with a proper gage. Multiply resist thickness (μm) by 21 

mJ/cm2 to obtain exposure dose. Divide expose dose (mJ/cm2) by light intensity (mW/cm2) 

at 365 nm wavelength to obtain exposure time (s). 

 

5. 80°C hotplate bake for a time depending on a film thickness. Please refer to bake 

instructions on page 1. 

 

6. Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C. 

Development time for an 8 μm thick film is 120 s. 

 

7. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

 

8. Drying of resist. 

 

9. Removal of resist in Resist Remover RR41 at 100 oC under efficient exhaust. 

 

The above procedure refers to substrates, which are good conductors of heat such as silicon, 

GaAs, InP, etc. Bake times need to be increased for substrates that are poor conductors of 

heat such as glass ceramics. 

  

 

Hling Precautions 

 

Negative Resist NR4-8000P is a flammable liquid. Hle it with care. Keep it away  

heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. 

Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves  

protective coating.