FUTURREX  POSITIVE RESIST NR5-8000

Description 

? Negative Resist NR5-8000 is a negative tone photoresist designed for thick film 

applications is compatible with UV exposure tools emitting at the 365 nm wavelength, 

including wafer steppers, scanning projection aligners, proximity printers contact 

printers. 

? These are the advantages of NR5-8000 over other resists: - superior resolution capability - high photospeed which translates into high exposure throughput - fast development time - superior temperature resistance of up to 180°C - superior ivity in RIE processes - easy resist removal using Resist Remover RR4 - shelf life exceeding 3 years at room temperature storage. 

? The formulation processing of NR5-8000 were designed with regard to occupational 

environmental safety. The principal solvent in NR5-8000 is cyclohexanone  

development of NR5-8000 is accomplished in a basic water solution. 

                              

Properties 

    ?    Solids content (%)                                                                                     39-43                       

    ?    Principal solvent                                                                                    cyclohexanone 

    ?    Appearance                                                                                               light yellow liquid 

    ?    Coating characteristic                                                                                very uniform, 

 striation free 

? Film thickness: 

    

Post

Exposure  

Coating  Oven Hotplate Hotplate Film 

Spin Speed Time Bake Time Bake Time Bake Time Thickness 

(rpm) (s) (min) 80°C (s) 150°C (s) 100°C (nm) 

250 30 15 followed by 180 240 90000-95000 

400 30 15 followed by 120 120 54000-60000 

1000 40 0 60 60 12500-14500 

2000 40 0 60 60 9000-12000 

3000 40 0 60 60 7500-8500 

4000 40 0 60 60 6250-6750 

5000 40 0 60 60 5750-6250 

    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)   21 

    ?    Guaranteed shelf life at 25°C storage (years)                                            3 

Processing 

 

1. Application of resist by spin coating at a ed spin speed for a time designated in a 

film thickness vs. spin speed on page 1. 

2. Softbake procedure is determined by film thickness. Please refer to bake instructions on 

page 1. 

3. Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm 

exposure light intensity (mW/cm2) with a proper gauge. Multiply resist thickness (μm) by 

21 mJ/cm2 to obtain exposure dose. Divide exposure dose (mJ/cm2) by light intensity 

(mW/cm2) at 365 nm wavelength to obtain exposure time (s). 

4. 100°C hotplate bake for a time depending on a film thickness. Please refer to bake 

instructions on page 1. 

5. Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C. 

Development time for an 8 μm thick film is 40 s for 100 μm thick film is 330 s. 

6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

7. Drying of resist. 

8. Removal of resist in Resist Remover RR4 or in acetone. 

 

The above procedure refers to substrates, which are good conductors of heat such as silicon, 

GaAs etc. Bake times need to be increased by a factor of 3.5 for substrates that are poor 

conductors of heat such as glass. 

 

Process Results