FUTURREX NEGATIVE RESIST NR7-1500P

Description 

? Negative Resist NR7-1500P is a negative tone photoresist designed for 365 nm 

wavelength exposure, using tools such as wafer steppers, scanning projection aligners, 

proximity printers contact printers. 

? These are the advantages of NR7-1500P over other resists: - superior resolution capability - fast photospeed - fast develop time - superior temperature resistance of up to 180°C - superior ivity in RIE process - easy resist removal in Resist Remover RR4 - shelf life exceeding 3 years at room temperature storage. 

? The formulation processing of NR7-1500P were designed with regard to occupational 

environmental safety. The principal solvent in NR7-1500P is cyclohexanone  

development of NR7-1500P is accomplished in a basic water solution. 

 

                              

Properties 

    ?    Solids content (%)                                                       24-28                   

    ?    Principal solvent                                          cyclohexanone 

    ?    Appearance                                                          light yellow 

 liquid 

    ?    Coating characteristic                                      very uniform, 

 striation free 

    ?    Film thickness after 150°C hotplate bake for 60 s.  

           Coating spin speed, 40 s spin (rpm):                                  (nm) 

800                                                       2850-3150 

1000 2565-2835 

2000 1805-1995 

3000 1425-1575 

4000 1235-1365 

5000 1140-1260 

 

    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)    21 

    ?    Guaranteed shelf life at 25°C storage (years)                               3  

Processing 

 

1. Application of resist by spin coating at ed spin speed for 40 s. 

 

2. 150°C hotplate bake for 60 s. (softbake). 

 

3. Resist exposure in a tool emitting 365 nm wavelength. 

 

4. 100°C hotplate bake for 60 s. (post-exposure bake). 

 

5. Resist development in Resist Developer RD6 by spray or immersion. 

Development time for 1.5 μm thick film, for example, is 12 s. 

To increase development time to 60 s combine RD6/water 3:1. 

 

6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

 

7. Drying of resist. 

 

8. Removal of resist in Resist Remover RR4 or in acetone. 

 

The above procedure refers to substrates, which are good conductors of heat such as silicon, 

GaAs etc. Bake times need to be increased 3.5 times for substrates, which are poor 

conductors of heat such as glass. 

 

 

Hling Precautions 

 

Negative Resist NR7-1500P is a flammable liquid. Hle it with care. Keep it away  

heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. 

Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves  

protective coating.